Please use this identifier to cite or link to this item:
Title: InGaAlAs/InAlAs multiple quantum-well structures grown by molecular beam epitaxy for long wavelength infrared detection
Authors: Tanakorn Osotchan
Keywords: InGaAlAs/InAlAs;lattice-matched;photoluminescence data;n-type;quantum-well
Issue Date: 1999
Publisher: Proceedings of the 1999 Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures
Citation: Proceedings of SPIE - The International Society for Optical Engineering
Abstract: We report the fabrication and characterization of the n-type InGaAlAs/InAlAs multiple quantum well structures, lattice-matched to InP, for the long wavelength infrared detection. It is found that strong absorption resulted from the intersubband transition in the quaternary material is observable and the wavelength of the absorption varies with the well width while the barrier width is kept unchanged. Our experimental results are in good agreement with the theoretical estimation based on simple finite barrier model and can be confirmed by the photoluminescence data.
ISSN: 0277786X
Appears in Collections:Physics: International Proceedings

Files in This Item:
There are no files associated with this item.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.