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|Title:||InGaAlAs/InAlAs multiple quantum-well structures grown by molecular beam epitaxy for long wavelength infrared detection|
|Publisher:||Proceedings of the 1999 Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructures|
|Citation:||Proceedings of SPIE - The International Society for Optical Engineering|
|Abstract:||We report the fabrication and characterization of the n-type InGaAlAs/InAlAs multiple quantum well structures, lattice-matched to InP, for the long wavelength infrared detection. It is found that strong absorption resulted from the intersubband transition in the quaternary material is observable and the wavelength of the absorption varies with the well width while the barrier width is kept unchanged. Our experimental results are in good agreement with the theoretical estimation based on simple finite barrier model and can be confirmed by the photoluminescence data.|
|Appears in Collections:||Physics: International Proceedings|
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