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|Title:||Antiferromagnetic exchange coupling between GaMnAs layers separated by a nonmagnetic GaAs:Be spacer.|
|Keywords:||Antiferromagnetic exchange coupling;Antiferromagnetics;GaAs;Interlayer exchange coupling;Neutron scattering measurements;Nonmagnetics|
|Publisher:||2011 American Institute of Physics|
|Citation:||Journal of Applied Physics|
|Abstract:||Interlayer exchange coupling (IEC) between two Ga0.95Mn 0.05As layers separated by Be-doped GaAs spacers was investigated using magnetometry and neutron scattering measurements, which indicated the presence of robust antiferromagnetic IEC under certain conditions. We argue that the observed behavior arises from a competition between the IEC field and magnetocrystalline anisotropy fields intrinsic to GaMnAs layers. We estimate the magnitude of the IEC field and show how it decays with increasing temperature.|
|Appears in Collections:||Physics: International Proceedings|
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