Please use this identifier to cite or link to this item: https://ir.sc.mahidol.ac.th/handle/123456789/729
Title: High pressure structural studies of AgInTe2
Authors: David John Ruffolo
Keywords: Chalcopyrite semiconductor;Chalcopyrite structures;Pressure increase;Orthorhombic structures;AgInTe2;Structural phase transformations;Structural studies;Zinc-blende
Issue Date: 2010
Publisher: 2010 IOP Publishing Ltd.
Citation: ฟิสิกส์
Series/Report no.: ;Article number 012008
Abstract: The structural phase transformations in the chalcopyrite semiconductor AgInTe2 have been studied up to 10 GPa on both pressure increase and decrease. The experiments were conducted using angle-dispersive X-ray diffraction with synchrotron radiation and an image plate. The diffraction patterns of AgInTe2 at ambient pressure reveal two coexisting phases: the first has the chalcopyrite structure while the second has a zincblende-like structure. On pressure increase both phases transformed at 3-4 GPa to a cation-disordered orthorhombic structure with spacegroup Cmcm. On pressure decrease, the chalcopyrite phase started to reappear at 0.55 GPa, and the Cmcm phase disappeared completely at ambient pressure.
Description: Scopus
URI: https://ir.sc.mahidol.ac.th/handle/123456789/729
ISSN: 17426588
Appears in Collections:Physics: International Proceedings

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