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|Title:||High pressure structural studies of AgInTe2|
|Authors:||David John Ruffolo|
|Keywords:||Chalcopyrite semiconductor;Chalcopyrite structures;Pressure increase;Orthorhombic structures;AgInTe2;Structural phase transformations;Structural studies;Zinc-blende|
|Publisher:||2010 IOP Publishing Ltd.|
|Citation:||Journal of Physics: Conference Series 215,1 (2010); 1-4|
|Abstract:||The structural phase transformations in the chalcopyrite semiconductor AgInTe2 have been studied up to 10 GPa on both pressure increase and decrease. The experiments were conducted using angle-dispersive X-ray diffraction with synchrotron radiation and an image plate. The diffraction patterns of AgInTe2 at ambient pressure reveal two coexisting phases: the first has the chalcopyrite structure while the second has a zincblende-like structure. On pressure increase both phases transformed at 3-4 GPa to a cation-disordered orthorhombic structure with spacegroup Cmcm. On pressure decrease, the chalcopyrite phase started to reappear at 0.55 GPa, and the Cmcm phase disappeared completely at ambient pressure.|
|Appears in Collections:||Physics: International Proceedings|
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