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|Title:||Investigation of the use of rotating linearly polarized light for characterizing SiO2 thin-film on Si substrate|
|Keywords:||Ellipsometric parameters;Ellipsometric technique;Polarizing mach- zehnder interferometer;Rotating linearly polarized light|
|Publisher:||Asia Communications and Photonics Conference and Exhibition, ACP 2011|
|Abstract:||This research is based on the Fresnel's equations and the ellipsometric technique that investigate the sample of SiO2 thinfilm on Si substrate. The investigation is made by a probing beam which is in the form of a rotating linearly polarized light generated by the polarizing Mach-Zehnder interferometer (pMZi). The detection of the changed polarization states of the incident light due to reflection on the sample surfaces led to a set of unique characteristics describing a thin-film substrate system in terms of ellipsometric parameters ψ and Δ. SiO2 thin-films were chosen to study because of their well known characteristics. The accuracy of measurements was confirmed by comparisons to calculated values derived from Fresnel's equations and a standard instrument. The results clearly reveal a feasibility of using the rotating linearly polarized light produced by pMZi for a non-destructive characterization of the thin-film system.|
|Appears in Collections:||Physics: International Proceedings|
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