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dc.contributor.authorTanakorn Osotchanen_US
dc.identifier.citationProceedings of SPIE - The International Society for Optical Engineeringen_US
dc.description.abstractWe report the fabrication and characterization of the n-type InGaAlAs/InAlAs multiple quantum well structures, lattice-matched to InP, for the long wavelength infrared detection. It is found that strong absorption resulted from the intersubband transition in the quaternary material is observable and the wavelength of the absorption varies with the well width while the barrier width is kept unchanged. Our experimental results are in good agreement with the theoretical estimation based on simple finite barrier model and can be confirmed by the photoluminescence data.en_US
dc.description.sponsorshipSPIE,Nanyang Technological Universityen_US
dc.publisherProceedings of the 1999 Photonics Technology into the 21st Century: Semiconductors, Microstructures, and Nanostructuresen_US
dc.subjectphotoluminescence dataen_US
dc.titleInGaAlAs/InAlAs multiple quantum-well structures grown by molecular beam epitaxy for long wavelength infrared detectionen_US
Appears in Collections:Physics: International Proceedings

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