Please use this identifier to cite or link to this item: https://ir.sc.mahidol.ac.th/handle/123456789/535
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dc.contributor.authorKritsanu Tivakornsasithornen_US
dc.date.accessioned2017-03-21T04:34:59Z-
dc.date.available2017-03-21T04:34:59Z-
dc.date.issued2011-
dc.identifier.citationJournal of Applied Physicsen_US
dc.identifier.issn00218979-
dc.identifier.urihttps://ir.sc.mahidol.ac.th/handle/123456789/535-
dc.descriptionScopusen_US
dc.description.abstractInterlayer exchange coupling (IEC) between two Ga0.95Mn 0.05As layers separated by Be-doped GaAs spacers was investigated using magnetometry and neutron scattering measurements, which indicated the presence of robust antiferromagnetic IEC under certain conditions. We argue that the observed behavior arises from a competition between the IEC field and magnetocrystalline anisotropy fields intrinsic to GaMnAs layers. We estimate the magnitude of the IEC field and show how it decays with increasing temperature.en_US
dc.language.isoen_USen_US
dc.publisher2011 American Institute of Physicsen_US
dc.subjectAntiferromagnetic exchange couplingen_US
dc.subjectAntiferromagneticsen_US
dc.subjectGaAsen_US
dc.subjectInterlayer exchange couplingen_US
dc.subjectNeutron scattering measurementsen_US
dc.subjectNonmagneticsen_US
dc.titleAntiferromagnetic exchange coupling between GaMnAs layers separated by a nonmagnetic GaAs:Be spacer.en_US
dc.typeArticleen_US
Appears in Collections:Physics: International Proceedings

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