Please use this identifier to cite or link to this item: https://ir.sc.mahidol.ac.th/handle/123456789/534
Title: Topological insulators Bi 2Te 3 and Bi 2Se 3 grown by MBE on (001) GaAs substrates
Authors: Kritsanu Tivakornsasithorn
Keywords: Magnetotransport;MBE;Raman;TEM;Topological Insulators;XRD
Issue Date: 2011
Publisher: 15th International Conference on Narrow Gap Systems, NGS15
Citation: AIP Conference Proceedings 1416 (2011);105-108
Abstract: Bi 2Te 3 Bi 2Se 3 and their alloy films were successfully grown by molecular beam epitaxy (MBE) on (001) GaAs substrates. The structural properties of these films were investigated by Reflection high-energy electron diffraction (RHEED), Atomic force microscopy (AFM), X-ray diffraction (XRD), High-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy and mapping. The results indicate that the epitaxial films are highly uniform. High-field and low-temperature magneto-transport measurements on these films are carried out and discussed.
Description: Scopus
URI: https://ir.sc.mahidol.ac.th/handle/123456789/534
ISSN: 0094243X
Appears in Collections:Physics: International Proceedings

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