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|Title:||Topological insulators Bi 2Te 3 and Bi 2Se 3 grown by MBE on (001) GaAs substrates|
|Publisher:||15th International Conference on Narrow Gap Systems, NGS15|
|Citation:||AIP Conference Proceedings 1416 (2011);105-108|
|Abstract:||Bi 2Te 3 Bi 2Se 3 and their alloy films were successfully grown by molecular beam epitaxy (MBE) on (001) GaAs substrates. The structural properties of these films were investigated by Reflection high-energy electron diffraction (RHEED), Atomic force microscopy (AFM), X-ray diffraction (XRD), High-resolution transmission electron microscopy (HRTEM) and Raman spectroscopy and mapping. The results indicate that the epitaxial films are highly uniform. High-field and low-temperature magneto-transport measurements on these films are carried out and discussed.|
|Appears in Collections:||Physics: International Proceedings|
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